Enrique Garcia

Graduate Student, EECS

Group publications 1

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Resolving and resetting the charge environment of single T-centers in silicon p-i-n waveguides

C. Zhang, H. Song, L. Komza, A. M. Day, E. Garcia, D. Witt, M. K. Bhaskar, A. Sipahigil, E. L. Hu

arXiv:2608.15993 (2026)

arXiv
```
@unpublished{zhang_resolving_2026,
  title = {Resolving and resetting the charge environment of single T-centers in silicon p-i-n waveguides},
  url = {https://arxiv.org/abs/2608.15993},
  doi = {10.48550/ARXIV.2608.15993},
  author = {Zhang, Chaoshen and Song, Hanbin and Komza, Lukasz and Day, Aaron M. and Garcia, Enrique and Witt, Donald and Bhaskar, Mihir K. and Sipahigil, Alp and Hu, Evelyn L.},
  month = aug,
  year = {2026},
  note = {Version Number: 1},
  arxiv = {2608.15993}
}
```
The silicon T-center is a telecom-band spin-photon interface in a manufacturable photonics platform. In nanophotonic devices, however, its optical linewidth is broadened by a fluctuating charge environment, limiting photon indistinguishability for quantum networking. Here, we address this challenge through characterization and suppression of the local charge-noise of single T-centers in lateral p-i-n waveguides, demonstrating an unheralded method of T-center optical linewidth narrowing. Above-band illumination resets the charge environment, neutralizing the local field and suppressing spectral diffusion. Across 46 emitters this reset narrows the median linewidth 3.5-fold to 0.57(11) GHz, and an optimized emitter reaches 128(22) MHz, the narrowest unheralded linewidth reported for an integrated T-center. The narrowed transition supports coherent optical Rabi oscillations with a coherence time of 20(2) ns. Finally, we perform Stark-shift tuning using the p-i-n junction, and read out the local electric field and the charge-noise width at 15 mK. An analytical model of proximal surfaces, bulk, and junction field effects provides good agreement with our findings. Our multi-pronged characterization of the nanophotonic-integrated T-center charge environment enables future device optimization toward scalable quantum interconnects.